Electronic Materials Lab

Publications

Dr. Choong-Un Kim

N. L. Michael, C.-U. Kim, P. Gillespie, and R. Augur, "Mechanism of Reliability Failure in Cu Interconnects with Ultralow-k
Materials", Appl. Phys. Lett. 83, 1959 (2003).

C.-U. Kim, J. Y. Park, N.L. Michael, P. Gillespie, and R. Augur, "Study of Electron Scattering Mechanism in Nanoscale Cu
Interconnects, J. Electron. Mater. 32, 982 (2003).

J.-Y. Park, R. Kabade, C.-U. Kim, T. Carper, S. Dunford, and V. Puligandla, " Influence of Au on the Phase Equilibria
of Near Eutectic Sn-Ag-Cu Pb-free Solder Alloys", J. Electron. Mater. 32, 1474 (2003).

J.-Y. Park, C.-U. Kim, T. Carper, and W. Puligandla, " Phase Equilibria Studies of Ag-Cu-Sn Eutectic Solder Using
Differential Cooling of Sn-3.8Ag-0.7Cu Alloys", J. Electron. Mater. 32, 1297 (2003).

A. Yildiz, D. P. Butler, Z. Celik-Butler, and C.-U. Kim, Crystallization and Pyroelectric Effect of Semiconducting YbaCuO
Thin Films Deposited at Different Temperatures", J. Vac. Sci. and Technol. B, 21, 1 (2003).

H.A. Le, L.Ting, N. C.Tso, and C.-U. Kim, " Analysis of the Reservoir Length and its Effect on Electromigration Lifetime", J.
Meter. Res. 17, 167 (2002).

N. L. Michael, C.-U. Kim, P. Gillespie, and R. Augur, " Mechanism of Electromigration Failure in Submicron Cu
Interconnects", J. Electron. Mater., 31 1004 (2002).

A. Yildiz, Z. Celik-Butler, D. P. Butler, C.-U. Kim, "Investigation of Temperature Coefficient of Resistance and Crystallization
of Semiconducting YBaCuO Thin Films using Pulsed Laser Annealing", J. Vac. Sci. and Technol. B, 20 548 (2002).

M. J. Lee, C.-U. Kim, "Investigation on Self-aligned HgTe Nano-crystals Induced by Controlled Precipitation in PbTe-
HgTe Quasi-binary Compound Semiconductor Alloys", Physica B 304, 267 (2001).

N. L. Michael, and C.-U. Kim, "Electromigration in Cu Thin Films with Sn and Al Cross Strips", J. Appl. Phys. 90, 4370
(2001).

C.-U. Kim, N. L. Michael, Q.-T. Jiang, and R. Augur, "Efficient Electromigration Testing with a Single Current Source",
Rev. Sci. Instru. 72, 3962 (2001).

"The Kinetics of Electromigation-induced Edge Drift in Al-Cu Thin Film Intercontects", C.-U. Kim, H.M. Lee, and J.W.
Morris, Jr., J. Appl. Phys. 82, 1592(1997)

"The Metallurgical Control of Electromigration Failure in Narrow Conducting Lines", J.W. Morris, Jr. C.-U. Kim, and S.H.
Kang, J. of Metals 48, 43 (1996)

"Effect of Post-Patterning Annealing on the Grain Structure and Reliability of Al based Interconnects", S.H. Kang, C.-U.
Kim, J.W. Morris, Jr., and F. Genin, J. Appl. Phys. 79, 8330(1996)

"Effect of Current Reversal on the Failure Mechanism of Al-Cu-Si Narrow Interconnects", C.-U. Kim, S.H. Kang, and J.W.
Morris, Jr., J. Electron Materials 25,293(1996)

"The Influence of Microstructure on the Resistivity of Al-Cu-Si Thin Film Interconnects", C.-U. Kim, S.I. Selister, and
J.W. Morris, Jr., J. Appl. Phys. 75,879-884(1994)

"The Mechanism of Electromigration Failure of Narrow Al-2Cu-1 Si Thin Film Interconnects", C.-U. Kim, and J.W.
Morris, Jr., J. Appl. Phys. 73,4885-4893(1993)

"The Influence of Cu Precipation on Electromigration of Failure in Al-Cu-Si", C.-U. Kim, and J.W. Morris, Jr.,
J.Appl.Phys. 72,1837-1846(1992)

　

Heedong Yang:

H.D. Yang, N.L. Michael, C.-U. Kim, P. Gillespie, and R.A. Augur, “Electro-thermal-fatigue as a wafer-level copper reliability test method,” TECHCON 2003, Dallas, Texas, USA (2003).

S. Canumalla, H.D. Yang, P. Viswanadham, and T. Reinikainen, “Package to board interconnection shear strength (PBISS): Effect of surface finish, PWB build-up layer and chip scale package structure,” IEEE Transaction on Components and Packaging Technologies 27, 182 (2004).

S. Canumalla, H.D. Yang, and P. Viswanadham, “Package to board interconnection shear strength (PBISS) test method for characterizating interconnection quality,” Proceedings of the 53^rd IEEE Electronic Components and Technology Conference (ECTC), New Orleans, Louisiana, USA, 105 (2003).

S. Canumalla, H.D. Yang, and P. Viswanadham, “Method for measuring package to board interconnection shear strength for area array, fine pitch packages,” Proceedings of the 28^th International Symposium for Testing and Failure Analysis, Phoenix, Arizona, USA, 377 (2002).

H.D. Yang and C.-U. Kim, “Kinetic mechanism of self-annealing in electroplated copper thin films,” Advanced Metallization Conference 2000, San Diego, California, 187 (2000).

H.D. Yang, C.-U. Kim, M. Saran, and H.A. Le, “TEM observations on the evolution of grain structure in pressurized Al-0.5Cu thin films,” Proceedings on Materials Reliability in Microelectronics VIII, Materials Research Society 516, 121 (1998).

Nancy Michael:

C.-U. Kim, J. Y. Park, N.L. Michael, P. Gillespie, and R. Augur, "Study of Electron Scattering Mechanism in
Nanoscale Cu Interconnects, J. Electron. Mater. 32, 982 (2003)

N.L. Michael, Choong-Un Kim; P. Gillespie, R. Augur, “Electromigration failure in ultra-fine copper
   interconnects”, Journal of Electronic Materials, 32, 988 (2003)

N. L. Michael, C.-U. Kim, P. Gillespie, and R. Augur, "Mechanism of Reliability Failure in Cu Interconnects
   with Ultralow-k Materials", Appl. Phys. Lett., 83,1959 (2003).

N. L. Michael, Choong-Un Kim, Qing-Tang Jiang, R. A. Augur, P. Gillespie, “Mechanism of electromigration
   failure in submicron Cu interconnects”, Journal of Electronic Materials, 31, 1004 (2002).

Choong-Un Kim; N. L. Michael; Qing-Tang Jiang; R. Augur, “Efficient electromigration testing with a single
current source”, Review of Scientific Instruments, 72, 3962 (2001).

Michael, N.L., Kim, C-U., “Electromigration in Cu thin films with Sn and Al cross strips,” Journal of
Applied Physics, 90, 4370 (2001).

   Jee Yong Kim:

- International paper
MOCVD of TiN and/or Ti from new precursor; J. G. Lee, J. Y. Kim, and H. K. Shin, Thin Solid Film, 320, 15-19 (1998)

- Domestic paper (in Korea)
MOCVD of Titanium Nitride from a New Precursor Ti[N(CH3)C2H5]4; J.W. Choi, J.G. Lee, J. Y. Kim, E.K. Lee, H.N. Hong,
   H.K. Shin, Korea Journal of Materials Research, vol.9, No.3, 244-250 (1998)

Formation of Tungsten silicide gate electrode on quartz; Sanghun Oh, Ji-Yong Kim, Ji-young Kim, Jaegab Lee, In-Gon
   Lim, Korea Journal of Materials Research, vol.8, No.1, 80-84 (1998)

Effects of premixing of TDEAT and NH₃ on TiN formation; Jiyong Kim, Jaegab Lee, Sangjoon Park and Hyunkook
   Shin, Korea Journal of Materials Research, vol.7, No.7, 576-581 (1997)

- Technical Report
The effects of dopant on deposition of DCS-base tungsten silicide.(1998)

The characterization of Si-rich tungsten gate polycide of IBM process.(1998)

The characterization of IBM gate polycide process and comparison of other processes.(1997)

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