SRC Student 

Jee Yong Kim

jeeyong@mech.uta.edu

Tel:+817-301-5519 (Home)

     +817-272-5710 (Office)

 

Objective: Career in research and development for Copper metal interconnects, Cu reliability and Cu Electromigration, Tungsten silicide polycide gate and/or development in Titanium CVD process and MEMS devices (Probe card).

 

n        Educational History

，      Kookmin University, Seoul. Korea, 1995 B.A. with degree in Metallurgical Engineering

，     Graduate school of Kookmin University, Seoul Korea, 1997 M.S. with degree in Metallurgical  

     Engineering.

            Thesis : " A study of the formation of TiN film using Metalorganic Chemical Vapor Deposition ＾

，     Graduate school of University of Texas at Arlington, 2002 M.S. with degree in Materials science

     and Engineering.

     Thesis : " The study of interface electromigration in Cu interconnects"

 

n        Honors, Awards and Scholarship/Fellowship

，         Teaching and Research assistantship at Graduate school of Kookmin University(｀95~¨97)

，         Teaching and Research assistantship at Graduate school of University of Texas at Arlington (｀99~¨02)

，          

n        Chronological  Experiences

 

Research Engineer at Dongbu Electronics Co.ltd (1997~1998)

     

，           CVD process (WSix polycide gate),

，           PECVD  TEOS SiO2,

，           PECVD - SiH4 based SiO2, HDP- SiO2  

                (64M, 256M DRAM ; Jointed IBM Technology)

 

     Intern researcher at Korea Science and Engineering Foundation (1998)

 

，          A study on the formation of low resistance interconnect and contact suitable for the generation       

integrated circuits ( MOCVD Cu/MOCVD TiN in-situ process and MOCVD Ti-Si-N 

 

Senior Research Engineer at AMST (Advanced Materials and Semicondutor Technology)  

Co.ltd(1998~1999)

 

，           Develop MEMS device (Vertical type Probe card) (98~99)

 

* AMST have supplied probe card to Samsung Electronics since 2001.

 

n        Research Interest

 

，         Reliability problems in Cu interconnects

- Cu Electromigration

 

 

n          Publications and presentations

 

- International paper

1. MOCVD of TiN and/or Ti from new precursor; J. G. Lee, J. Y. Kim, and H. K. Shin, Thin Solid  Film,

    320, 15-19 (1998)

 

- Domestic paper (in Korea)

1.       Effects of premixing of TDEAT and NH3 on TiN formation; Jiyong Kim, Jaegab Lee, Sangjoon Park and Hyunkook Shin, Korea Journal of Materials Research, vol.7, No.7, 576-581 (1997)

 

2.       Formation of Tungsten silicide gate electrode on quartz; Sanghun Oh, Ji-Yong Kim, Ji-young Kim, Jaegab Lee, In-Gon Lim, Korea Journal of Materials Research, vol.8, No.1, 80-84 (1998)

 

3.       MOCVD of Titanium Nitride from a New Precursor Ti[N(CH3)C2H5]4; J.W. Choi, J.G. Lee, J. Y. Kim, E.K. Lee, H.N. Hong, H.K. Shin, Korea Journal of Materials Research, vol.9, No.3, 244-250 (1998)

 

- International conference

1.       Characterization of MOCVD TiN films by using TDEAT(Ti[N(C2H5)2]4/NH3 and TEMAT(Ti[N(CH3)C2H5]4/NH3; Jiyong Kim, Sanghun Oh, Jaegab Lee, The 4th IUMRS International Conference in Asia (1997)

 

2.       A diffusion property of high quality MOCVD TiN for Cu metallization; Jae-Ho Kim, Sang-Joon Park, Namjin Beh, Sang-Ho Kim, Jae-Gon Lee, Si-Young Choi, Jee-Yong Kim, Jae-Gab Lee, MRS Conference proceeding, vol. V-12, Advanced Metallization and Interconnect System for ULSI Application in 1996, edited by R. Havemann, J. Schmitz, H. Komiyama, and K. Tsubouchi, 367-371 (1997)

 

3.       Characterization of TiN produced by TDEAT(Ti[N(C2H5)2]4) and TDMAT(Ti[N(CH3)2]4); Jae-Gab Lee, Jee-Yong Kim, Sang-Hun Oh, Hyun-Kook Shin, Jae-Ho Kim, Sang-Joon Park; The 8th Seoul International Symposium on the Physics and Semiconductors and Applications (1996)

 

4.  Metalorganic Chemical Vapor Deposition of TiN using TDEAT; J.G. Lee and J.Y. Kim,  Proceeding of  

     the 3rd Workshop on Semiconductor Wafer and Cleaning and Surface Characterization, edited by K.  

     Ryoo and S. Kang, RIST, 122-133 (1996)

 

- Domestic conference (in Korea)

1. The formation of MOCVD TiN using TDEAT and diffusion property for Cu; The Korean Institute of

    Surface Engineering (1996)

 

2. The comparison of MOCVD TiN films using TDEAT and TDEAT/NH3; The Korean Vacuum Society   

    (1996)

 

- Technical Report

 

1.       The characterization of IBM gate polycide process and comparison of other processes.(1997)

 

2.       The characterization of Si-rich tungsten gate polycide of IBM process.(1998)

 

3.       The effects of dopant on deposition of DCS-base tungsten silicide.(1998)

 

 

  PROJECTS

 

1.  Improvement of MOCVD TiN quality using post-anneal treatment;

     (Inter-university Semiconductor Researcher Center, '95. 7. - '96. 3)

 

2. Formation of MOCVD TiN/MOCVD Ti for low resistance contact;

     (Inter-university Semiconductor Researcher Center, '96. 4. - '97. 3)

 

3. A study of the formation of low resistance interconnect and contact suitable for the generation integrated  

    circuits;

    (Korea Science and Engineering Foundation, '96. 7. -'97. 6, '98. 9. -'99.6)

 

4. A study on the formation of MOCVD Cu/MOCVD TiN;

     (Inter-university Semiconductor Researcher Center, '97. 4. - '97. 9)